Two-dimensional heterostructures of graphene (Gr) and metal/semiconducting elements convey new direction in electronic devices. They can be useful for spintronics because of small spin orbit interaction of Gr as a non-magnetic metal host with promising electrochemical stability. In this paper, we demonstrate one-step fabrication of magnetic Ni-particles entrapped within Gr-flakes based on simultaneous electrochemical exfoliation/deposition procedure by two-electrode system using platinum as the cathode electrode and a graphite foil as the anode electrode. The final product is an air stable hybrid element including Gr flakes hosting magnetic Ni-nano-crystals showing superparamagnetic-like response and room temperature giant magnetoresistance (GMR) effect at small magnetic field range. The GMR effect is originated from spin scattering through ferromagnetic/non-magnetic nature of Ni/Gr heterostructure and interpreted based on a phenomenological spin transport model. Our work benefits from XRD, XPS, Raman, TEM, FTIR and VSM measurements We addressed that how our results can be used for rapid manufacturing of magnetic Gr for low field magneto resistive elements and potential printed spintronic devices.

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When a flow of electron passes through a paramagnetic layer with strong spin-orbit-coupling such as platinum (Pt), a net spin current is produced via spin Hall effect (SHE). This spin current can exert a torque on the magnetization of an adjacent ferromagnetic layer which can be probed via magnetization dynamic response, e.g. spin-torque ferromagnetic resonance (ST-FMR). Nevertheless, that effect in lower frequency magnetization dynamic regime (MHz) where skin effect occurs in high permeability ferromagnetic conductors namely the magneto-impedance (MI) effect can be fundamentally important which has not been studied so far. Here, by utilizing the MI effect in magnetic-ribbon/Pt heterostructure with high transvers magnetic permeability that allows the ac current effectively confined at the skin depth of ~100 nm thickness, the effect of spin-orbit-torque (SOT) induced by the SHE probed via MI measurement is investigated. We observed a systematic MI frequency shift that increases by increasing the applied current amplitude and thickness of the Pt layer (varying from 0 nm to 20 nm). In addition, the role of Pt layer in ribbon/Pt heterostructure is evaluated with ferromagnetic resonance (FMR) effect representing standard Gilbert damping increase as the result of presence of the SHE. Our results unveil the role of SOT in dynamic control of the transverse magnetic permeability probed with impedance spectroscopy as useful and valuable technique for detection of future SHE devices.

We report on composition controlled MoS 2 and MoO x (x=2 and 3) compounds electrodeposited on Flourine dopped Tin Oxide (FTO) substrate. It was observed that the relative content has systematic electrical and optical changes for different thicknesses of layers ranging from ≈20 to 540 nm. Optical and electrical bandgaps reveals a tuneable behavior by controlling the relative content of compounds as well as a sharp transition from p to n-type of semiconductivity. Moreover, spin-orbit interaction of Mo 3d doublet enhances by reduction of MoO 3 content in thicker films. Our results convey path-way of applying such compounds in optoelectronics and nanoelectronics devices.