Articles you may be interested inPerformances by the electron optical system of low energy electron beam proximity projection lithography tool with a large scanning field Experimental optimization of the electron-beam proximity effect forward scattering parameter J. Vac. Sci. Technol. B 23, 2769 (2005); 10.1116/1.2062431 3D proximity effect correction based on the simplified electron energy flux model in electron-beam lithography Completion of the β tool and the recent progress of low energy e-beam proximity projection lithography Low energy electron-beam proximity projection lithography: Discovery of a missing link Some years ago a method for fast and accurate experimental evaluation of the proximity parameters ␣, , was suggested ͓S. V. Dubonos et al., Microelectron. Eng. 21, 293 ͑1993͔͒.The method, called the fitting before measurement procedure, is used for regular measurements of  and in a wide energy range for different bulk substrates ͑Si, SiO 2 , mica, ZrO 2 , Al 2 O 3 , InAs, GaAs͒ and of ␣ as function of resist thickness and energy. An empirical relation from the fitting procedure allows one to extrapolate the  and values to other substrates and energies. It is demonstrated that a resist of micron thickness can remarkably reduce the resolution of e-beam lithography. It is important that the reducing could not be improved by accurate focusing of the beam but could be overcome only by using a higher accelerating voltage. A phenomenological relation helps to predict resolution as function of resist thickness and electron energy.
Refractory metal monocrystalline nanostructures with spatial resolution up to 200 nm are fabricated by subtractive electron lithography and Al mask patterning of epitaxial refractory metal films. The size (width) effect on electrical properties of bridge-type metallic nanostructures with residual electron mean-free paths 200-500 nm is observed for the first time. It is also found that the change of the positive sign of electrical bending resistance at room temperature to the negative one at helium temperature proves the realization of the ballistic limit in electron transport in cross-type nanostructures. The effect of both ion etching and thermal annealing of nanostructures is also investigated.
We have observed an increase in the longitudinal magnetoresistance of mesoscopic tungsten bridges at low temperatures. We propose this effect to be caused by backscattering of electrons through spiralling orbits with radius smaller than the film thickness. When tilting the field direction slightly away from the bridge-axis, additional surface scattering leads to an abrupt destruction of this backscattering.
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