An optically pumped IF laser operating on the B Jll(O+)-+X II + transition has been studied. Vibrational levels v' = I, 2, 3, 4, 5, and 6 of IF(B) were pumped by a dye laser pulse and lasing was observed both from the level pumped and from lower levels populated as a result of collisions with bath gas molecules. Time delays from 0.5 to 3.0 J.t s were observed between termination of the pump pulse on v' = 5 and lasing out of v' = O. The longer delays result from slower vibrational relaxation at lower pressures. The stable nature of v' = 0 reservoir indicates that the B -X electronic transition is very attractive as a potential chemical laser system.

A continuous wave optically pumped iodine monofluoride laser operating on the B 311(0+) _ X II + system is described. The laser operated on a series of rovibronic lines originating from v I = 2-5. By tuning the dye laser pump source over a single rovibronic line, spectral structure was produced on the IF laser output that was analyzed and found to be consistent with hyperfine structure in IF. Hyperfine coupling constants were determined in this analysis. Implications for a chemically pumped IF laser are also presented.

An optically pumped iodine monofluoride laser operating on the B3Π(O+)→X2Σ+ system has been demonstrated. Ground-state IF was produced by the reaction of I2+F2 and subsequently excited with a high-energy, broadband dye laser. Lasing was observed on the (2,10), (3,11), (4,9), and (4,10) transitions covering the wavelength range 7200–6500 Å.

Iodine monofluoride, a promising visible chemical laser candidate, has been chemically produced at number densities exceeding 1×1015 molecules/cm3 in a supersonic flow. Combustion of nitric oxide and molecular fluorine produced atomic fluorine at an efficiency of 20%–30%, independent of flow conditions. The subsequent transonic reaction of atomic fluorine with molecular iodine to produce a stable flow of IF(X1Σ+) was mixing limited and complete within 10 μs. The low-pressure (3 Torr), low-temperature (300 K) flow environment should be suitable for lasing.

The radiative lifetime and quenching rates for the A 2Σ+ state of GeF have been measured in the flame of GeH4+F2 by pulsed laser induced fluorescence. In addition, the radiative lifetime of the ν′=0 level of the A 2Σ+ state of SiF has been measured in the flame of SiH4+F2. Quenching rates for He, N2, and SF6 on GeF A 2Σ and He on SiF A 2Σ have also been determined. The average zero pressure lifetime of ν′=0, 1, and 2 levels of A 2Σ GeF is 990±100 nsec. The zero pressure lifetime of the A 2Σ state of SiF is 205±20 nsec. The average quenching rates for He, N2, and SF6 on GeF A 2Σ are 1.6×105, 6.4×106, and 8×105 sec−1 Torr−1, respectively. The quenching rate of He on A 2Σ (ν′=0) SiF is 6.5×104 sec−1 Torr−1.