The results of electron microscopic and electron diffraction investigation of the surface during annealing of single-crystal AIIBVI (CdS, CdSe, ZnSe, ZnS) films in the presence of oxygen are reported.It is shown that the behaviour of islands of cadmium oxide formed by chemical interaction between 0, and the CdS, CdSe substrate in the process of growth resembles that of the nuclei in film condensation. CdO films become ''cont,inuous" more quickly, if the size of blocks of substrate-epitaxial AIIBvI film is larger. Epitaxial ZnO films formed on the surface of epitaxial ZnS and ZnSe layers are of a wurtzite structure or a cubic structuro with the parameter a = 4.6 A.Es wird uber die Ergebnisse elektronenmikroskopischer und ElektrorieribeugungrUntersuchungen von Oberfliichen beim Tempern von einkristallineri AlIBvI (CdS. CdSe, ZnSe, ZnS)-filmen in Gegenwart von Sauerstoff berichtet. Die Inseln von Cadmiumoxid, die sich bei der Reaktion zwischen 0, und dem CdS-. CdSe-Substrat gebildet haben, ahneln im WachstumsprozeB denen der Keime bei der Kondensation von dunnen Schichten. CdO-Schichten werden schneller gleichmaBig, wenn die Erstreckung der Blocke aus Substrat -epitaktischer AIIB\'I-Film grol3er ist. -Epitaktische ZnO-Filme auf der Oberflache epitaktischer ZnS-und ZnSe-Schichten haben Wurtzit-oder kubische Struktur mit, einem Gitterparameter von a = 4,6 A.
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