By bombarding samples with 1.1-MeV 4He+ ions and observing the energy spectra of the backscattered ions, it has been possible to determine the concentrations and lattice locations of arsenic and antimony impurities diffused into silicon. For the samples investigated it was found that only 60–75% of the arsenic atoms were in substitutional sites, even at impurity concentrations well below solid solubility. About 90% of the antimony atoms were found to be in substitutional sites.
Bombardment of aligned type-IIa diamond substrates with 80-keV protons and simultaneous detection of the resulting characteristic carbon K x rays has revealed excellent channeling structure. This technique has been used to monitor the crystallinity of a surface implanted with P31+ ions. Crystallinity was destroyed by P31+ does of the order of 1014/cm2. Vacuum annealing at 950°C restored the diamond cubic crystal structure.
A second polymorph of 4-aminobenzyl alcohol [orthorhombic, a = 8.95051(15), b = 5.8248(1), c = 12.1645(2) Å, space group Pna2 1 ] shows a "herringbone" structure with stacks of hydrogen-bonded molecules when viewed down the b-axis.
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