Cu-doped Ag2BiI5 (Cu:SBI) powders with 0–10 mol% doping concentrations were synthesized by a solid-state method in an evacuated glass tube. While doping of Cu did not appreciably modify the crystallographic...

A hierarchical electrode consisting of edge-exposed 1T phase WS2, grown on an array of surface-modified WO3 nanohelixes (NHs), and its enhanced catalytic performance in the hydrogen evolution reaction (HER) are presented.

Metal to semiconductor transition by hole compensation of excess electrons from VO and localized VO state in La0.5Sr0.5FeO3−δ under low PO2.

Although smart windows have received wide attention as energy-saving devices, conventional metal-to-insulator materials such as VO2 hinder their commercial usage because of their high transition temperature and low solar energy modulation. Further development can be achieved by finding a new material system that can effectively overcome these limitations. In this study, first-principles density functional theory calculations are used to investigate the possibility of exploiting a spin-polarized band gap material for smart window applications. Halide cuprite perovskites (A2CuX4) were chosen because they have a spin-polarized band gap that can be tuned by element selection at sites A and X. Our study shows that the optical transmittance of the insulating phase is increased by a violation of the selection rule. The spin-polarized band gap is closely related to the metal-to-insulator transition temperature and can be modulated by chemical engineering, strain engineering, or both. Therefore, A2CuX4 is a promising candidate for smart windows.