2020
DOI: 10.1039/c9ta12734h
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Effect of oxygen vacancies on electrical conductivity of La0.5Sr0.5FeO3−δ from first-principles calculations

Abstract: Metal to semiconductor transition by hole compensation of excess electrons from VO and localized VO state in La0.5Sr0.5FeO3−δ under low PO2.

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Cited by 47 publications
(17 citation statements)
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“…A defect‐rich surface promotes easy desorption of intermediates at the active sites to accelerate the adsorption of fresh reactants, which is in agreement with the Sabatier principle of balanced adsorption and desorption of intermediates. An optimum defect concentration is, however, necessary because otherwise oxygen defects also reduce the charge‐carrier concentration and can thereby decrease the electronic conductivity; this phenomenon is quite prevalent in perovskite oxide lattices . Our characterization results clearly validate optimum defect concentrations in CoF‐2 and CoF‐3 and show a trend that can explain the relative electrochemical performances.…”
Section: Resultssupporting
confidence: 66%
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“…A defect‐rich surface promotes easy desorption of intermediates at the active sites to accelerate the adsorption of fresh reactants, which is in agreement with the Sabatier principle of balanced adsorption and desorption of intermediates. An optimum defect concentration is, however, necessary because otherwise oxygen defects also reduce the charge‐carrier concentration and can thereby decrease the electronic conductivity; this phenomenon is quite prevalent in perovskite oxide lattices . Our characterization results clearly validate optimum defect concentrations in CoF‐2 and CoF‐3 and show a trend that can explain the relative electrochemical performances.…”
Section: Resultssupporting
confidence: 66%
“…An optimum defect concentration is, however,n ecessary because otherwise oxygen defects also reduce the charge-carrier concentrationa nd can thereby decrease the electronic conductivity;t his phenomenon is quite prevalent in perovskite oxide lattices. [29,65] Our characterization results clearly validate optimum defect concentrations in CoF-2 and CoF-3 and show at rend that can explain the relative electrochemical performances.…”
Section: Role Of Oxygen Defects In the Electrocatalytic Performancesupporting
confidence: 67%
“…Ideally, OER intermediates (O*, OH*, and OOH*) should not bind too strongly to the active site of a perovskite, to facilitate for reasonable dynamics. Man et al utilized [108]. Density of states (DOS) calculations in Fig.…”
Section: Advantageous Intrinsic Effects Of Oxygen Vacancies In Perovsmentioning
confidence: 99%
“…Reproduced from Ref. [108] with permission from The Royal Chemical Society, Copyrights 2020 manifesting near 300 mV reduction in overpotential and 80 times higher specific activity at 1.7 V vs. RHE [116]. Chronoamperometric (CA) tests revealed that formation of oxygen vacancies in Sr 2 VFeAsO 3 − ẟ does not cause structural instabilities.…”
Section: Disadvantageous Effects Of Oxygen Vacancies In Perovskitesmentioning
confidence: 99%
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