SEB tolerance of SiC power MOSFETs against terrestrial neutrons is studied. It is shown that the failure probability increases exponentially with applied voltage and is several orders of magnitude lower than that of a Si MOSFET. The energetic secondary carbon atoms generated by the nuclear reactions and the collisions between the terrestrial neutrons and the lattice atoms of SiC devices may play important role in the SEB triggering mechanism in SiC power devices.Index Terms-Insulated gate bipolar transistor (IGBT), power device, power MOSFET, Schottky barrier diode (SBD), silicon carbide (SiC), single-event burnout (SEB), spallation neutron, terrestrial neutron.
This report presents the successful operation of a 1-bit counter circuit with an optical output as a demonstration of monolithic optoelectronic integrated circuits. The circuit was fabricated in a lattice-matched Si/III–V–N/Si heterostructure, using p-type metal oxide semiconductor field effect transistors and light emitting diodes (LEDs). The generation of structural defects was significantly suppressed and smooth surfaces were formed. The carrier concentration of the Si-capping layer was decreased to (0.8–1.2)×1017 cm-3 by increasing the growth temperature. In the resulting chips, the red light emission from the LEDs was in synchronization with the logical values of input and output voltages.
The adaptive frequency estimation has many engineering applications, and a lot of techniques have been worked out. In this paper, we propose a new computationally efficient adaptive frequency estimation algorithm which is based on the blocked variable sampling and the synchronous addition / subtraction processing (SAS). The SAS requires additions and subtractions only, which makes the new frequency estimation technique very attractive in terms of computation load. Extensive simulations are presented to reveal the performance of the proposed technique which is expected to have potential applications where the sinusoidal frequencies vary slowly around their nominal values and the estimation algorithm with small complexity is highly desired. The proposed algorithm is also compared with the DFT(FFT) and the conventional gradientbased IIR adaptive notch filter methods in terms of both estimation accuracy and computational complexity.
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