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The thermal conduction characteristics of GeTe and Ge2Sb2Te5(GST) nanowires were investigated using an optical method to determine the local temperature by Raman spectroscopy. Since the localization of surface charge in a single-crystalline nanostructure can enhance charge-phonon scattering, the thermal conductivity value (κ) of single crystalline GeTe and GST nanowires was decreased significantly to 1.44 Wm(-1) K(-1) for GeTe and 1.13 Wm(-1) K(-1) for GST, compared to reported values for polycrystalline structures. The SET-to-RESET state in single-crystalline GeTe and GST nanowires are characteristic of a memory device. Unlike previous reports using GeTe and GST nanowires, the SET-to-RESET characteristics showed a bipolar switching shape and no unipolar switching. In addition, after multiple cycles of operation, a significant change in morphology and composition was observed without any structural phase transition, indicating that atoms migrate toward the cathode or anode, depending on their electronegativities. This change caused by a field effect indicates that the structural phase transition does not occur in the case of GeTe and GST nanowires with a significantly lowered thermal conductivity and stable crystalline structure. Finally, the formation of voids and hillocks as the result of the electromigration critically degrades device reliability.

The structural characteristics and the chemical state of a HfO2–Al2O3 nanolaminate structure, depending on the postannealing temperature, were examined by x-ray diffraction and x-ray photoelectron spectroscopy. The structural stability is significantly enhanced up to 870 °C and so is able to sustain its amorphous and laminate structure. However, the laminate structure is drastically broken at the annealing temperature of 920 °C and the crystallization is locally generated. In particular, the formation of the interfacial layer during the postannealing treatment is effectively suppressed in the nanolaminated structure. The dielectric constant of the nanolaminate structure calculated from the accumulation capacitance increases from ∼10 to ∼17 as the annealing temperature increases. This change is closely related to the degree of the mixture composed by Al2O3 and HfO2.

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High-resolution angle-resolved photoemission results are presented which allow us to determine the complete Fermi surfaces for the surface-localized electronic levels on the clean and hydrogencovered Mo(011) surfaces. Similar to previously presented data for W(011), we observe a total of three distinct closed hole orbits and one closed electron orbit. The hole orbits are elliptical and are centered on different projections of the same bulk Fermi-surface ellipsoid. They are located at the center and along each of the edges of the surface Brillouin zone. The surface electron pocket is closed but has a very complex shape which is somewhat different from the one observed on W(011). It orbits the projection of a bulk electron pocket which is traditionally called a jack, and is centered in the surface Brillouin zone. As was observed for W(011), these orbits are affected to different extents by hydrogen adsorption. The hole pockets are rapidly quenched by hydrogen, while the electron pocket grows in area until it merges with its image in the second Brillouin zone. At saturation there exist two hole pockets which are the remnants of the clean-surface electron pocket. These results are discussed in terms of the dynamical response of the surface. Electronic damping mechanisms for low-energy surface excitations are discussed. Some of the possible vibrational Kohn anomalies are enumerated.

Angle-resolved photoemission measurements of the Fermi surfaces of several surface localized states of clean and hydrogen-covered W(l 10) are reported. Three hole orbits and one electron orbit have been characterized. The hole-orbit states are rapidly attenuated by hydrogen, while the electron-orbit states are shifted to higher binding energy resulting, initially, in an expansion of the Fermi surface, and ultimately, in its conversion to two hole orbits. These data represent the most detailed study of the behavior of the two-dimensional Fermi surface to date.