Nowadays, active-matrix organic light-emitting diode (AMOLED) technology has been intensively utilized in commercial large-size flat panel markets such as notebooks, personal computers, display monitors, and high-definition televisions. [1,2] This widespread use is due to the many attractive features that are offered by AMOLEDs, including wide viewing angles, high contrast ratios, low power consumption, and fast response times. Despite these advantages, one of the most critical issues for the technology is the inability to incorporate thin-film transistors (TFTs) in these large-sized applications (!7th generation glass size of 1.9 m  2.2 m (max)). The only mature technology compatible with producing large-sized panels (!7th generation) is based on amorphous Si (a-Si) TFTs, whose inferior long-term stability [3][4][5][6] under gate or/and drain bias stressed conditions hinders their utilization in AMOLED panels.Recently, ZnO-based TFTs have become attractive for use as driving devices in large-sized AMOLED applications, due to their better device performance and reliability; in addition, they offer large-size scalability features with good uniformity, and low product cost, comparable to their a-Si TFT counterparts. [7,8] Furthermore, the transparency of ZnO-based oxide semiconductor and their low-temperature process capability could open the opportunity to the next generation of applications, including ''see-through'' and/or ''flexible'' AMOLED displays, which cannot be realized via silicon-based TFT technologies due to their intrinsic limitations.There have been many reports of high-performance TFTs with oxide semiconductors, including ZnO, [8][9][10] InZnO, [11][12][13] ZnSnO, [14] and InGaZnO [15][16][17][18][19] as the channel materials. The field-effect mobilities (m FE ), sub-threshold gate swing (S), and I on/ off ratios of ZnO-based TFTs have been dramatically improved since Hosono and coworkers reported the usage of amorphous InGaZnO as a channel material using physical-vapor-deposition techniques.[7] Thus, the device performance of ZnO-based TFTs reported in the literature includes high mobility (>10 cm 2 V s À1 ), excellent sub-threshold gate-voltage swing (<0.4 V decade À1 ), and high I on/off ratios (>10 7 ), which are superior to those found in a-Si TFT applications. [7,8,15,16,18,19] However, the stability of ZnO-based TFT devices has remained the most important and critical issue still to be resolved to allow them to be used as driving devices in AMOLED displays. This is because any positive shift in the threshold voltage (V th ) of the driving transistor during the on-state bias stressed condition causes a rapid drop in the output drain current, leading to reduction in the luminance of the OLED device. The nonuniformity in the V th shift of the pixel driving transistors as a result of the different data voltages obviously causes the well-known problem of the image sticking in the resulting panel brightness. [20][21][22] Several studies on bias-induced instabilities in ZnO-based TFTs have reported...
An analytical vehicle model is essential for the development of vehicle design and performance. Various vehicle models have different complexities, assumptions and limitations depending on the type of vehicle analysis. An accurate full vehicle model is essential in representing the behaviour of the vehicle in order to estimate vehicle dynamic system performance such as ride comfort and handling. An experimental vehicle model is developed in this article, which employs experimental kinematic and compliance data measured between the wheel and chassis. From these data, a vehicle model, which includes dynamic effects due to vehicle geometry changes, has been developed. The experimental vehicle model was validated using an instrumented experimental vehicle and data such as a step change steering input. This article shows a process to develop and validate an experimental vehicle model to enhance the accuracy of handling performance, which comes from precise suspension model measured by experimental data of a vehicle. The experimental force data obtained from a suspension parameter measuring device are employed for a precise modelling of the steering and handling response. The steering system is modelled by a lumped model, with stiffness coefficients defined and identified by comparing steering stiffness obtained by the measured data. The outputs, specifically the yaw rate and lateral acceleration of the vehicle, are verified by experimental results.
In this paper, several tire models (Magic formula, Carpet plot, UA tire, DADS tire and STI tire) are implemented and compared. Since the STI (System Technology Inc.) tire model in the AutoDyn7 program is in a good agreement to NADSdyna STI tire model and experiment, it is selected as a reference tire model for the comparison. To compare tire models, input parameters of each tire model are extracted from the STI tire model to preserve the same tire properties. Several simulations are carried out to compare performances of tire models, i. e., bump simulation, lane change simulation, and pulse steering simulation. The performances in vehicle maneuverability are also compared with the four parameter evaluation method.
In this article, a massless link model transmitting external forces is developed to achieve numerical efficiency in simulation of vehicle suspension systems. Forces acting on links are resolved and transmitted to attached points with a quasi-static assumption. Also, a theoretical derivation and computer implementation of a massless link with bushing elements are proposed. In the massless link with bushing elements, one end is connected to the adjacent body by bushing, and the other end is connected by a spherical joint. The deformation of a massless link with bushing elements is determined by minimizing the potential energy func-*Communicated by B. Gilmore. † Corresponding
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.