Abstract-We are developing a Compton camera based on Si and CdTe semiconductor imaging devices with high energy resolution. In this paper, results from the most recent prototype are reported. The Compton camera consists of six layered doublesided Si Strip detectors and CdTe pixel detectors, which are read out with low noise analog ASICs, VA32TAs. We obtained Compton reconstructed images and spectra of line gamma-rays from 122 keV to 662 keV. The energy resolution is 9.1 keV and 14 keV at 356 keV and 511 keV, respectively.
An inductive-coupling programmable bus is developed for NAND flash memory access in Solid State Drive (SSD). A channel arrangement scheme using 3 coils enables random access for memory read and memory write. Transmission power is reduced by 47% compared to a previous design with 2 coils and a shield [1]. A coil layout style, namely XY coil, allows the coils covered by logic interconnections, resulting in area reduction by 91%. Relayed data transmission at 1.6Gb/s and BER<10 -12 is achieved.
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