A series of poly(aryl ether)s were successfully prepared via aromatic nucleophilic substitution reaction from various bisphenols and a novel bipolar aryl difluoride monomer containing electron-donor triphenylamine and electron-acceptor 1,2,4-triazole moieties. The poly(aryl ether)s exhibited excellent solubility in organic solvents such as dimethylformamide, chloroform, and tetrahydrofuran at room temperature. The poly(aryl ether)s showed high thermal stability with T d10 higher than 500 C and glass transition temperatures (T g ) higher than 187 C. The thin films of the poly(aryl ether)s indicated bistable resistive switching behavior with ON/OFF current ratios as high as 10 3 . The switching on and switching off bias voltages of the poly(aryl ether)s were affected by the bisphenol moiety. The good resistive switching behavior of the poly(aryl ether)s made them promising candidates for future nonvolatile memory applications. V V C 2008 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 46: [6861][6862][6863][6864][6865][6866][6867][6868][6869][6870][6871] 2008
Two series of polymers including polyimides and poly(aryl ether)s were prepared and used as active layers of polymer memories. The poly(aryl ether)-based polymers showed flash behaviors and polyimide-based polymers showed WORM behaviors. The poly(aryl ether)s flash memories can be negatively switched on and positively switched off, and the switching voltages are relative to the chemical structure of bisphenol moiety. On the other hand, the polyimide-based polymer devices can be bidirectionally switched on with comparable positive and negative switching threshold voltages, but cannot be switched off. The polyimides showed write-once-and-read- many-times (WORM) memory behavior. The poly(aryl ether) (AZTA-PAEb) showed very different memory behavior from polyimides (AZTA-PI and AZTA-PEI) although they contain the similar chemical structure (electron-donor triphenylamine and electron-acceptor triazine moieties). The imide structure in the polyimides plays a great role in the memory effects.
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