In recent times, 4H-SiC has been at the center of power semiconductor device research due to its superior material properties such as large bandgap (E g ~3.26 eV), high breakdown electric field (E c ~3 MV/cm which is almost 10 times that of Si), high saturated electron velocity (~2.0×10 7 cm/s which is almost 2 times that in Si), high thermal conductivity (K ~4.9 W/cm.K) and most importantly ability to form a stable native oxide SiO 2. Schottky barrier diodes (SBDs) based on 4H-SiC offer superior dynamic performance (<20 nC reverse recovery charge for a 1200 V, 1A SBD), almost 100 times lower specific-on resistance compared to Si SBDs and PiN diodes. The higher bandgap results in much higher schottky barrier height compared to Si and GaAs resulting in extremely low leakage currents even at elevated temperatures (>300 o C operation). Edge termination and passivation is a critical technology for power devices to fully realize their voltage blocking potential. The objective of this research was to develop the process technology for fabrication of high voltage 4H-SiC SBDs. We decided to use a simple edge termination technique based on Field-Plate (FP) termination. The simplicity of FP termination lies in the fact that unlike other termination techniques such as guard rings, mesa and Junction Termination Extensions (JTE), it does not need high temperature ionimplantations. Such high temperature implantation requires the substrate to be maintained at 700-1000 o C during implantation. It also needs subsequent extreme high temperature anneals in excess of 1500 o C to reduce implantation damage. There are also design issues such as the need to optimize ring spacing. FP termination technique has long been a power horse of Si power device technology using thick SiO 2 field oxide and poly silicon as electrode overlapping the oxide. For past decade or so since its first application to SiC power device ATTENTION: The Singapore Copyright Act applies to the use of this document. Nanyang Technological University Library XI 6.5.3 Electric Field profile of FP terminated 4H-SiC SBDs along the schottky edge with 2-step Breakdown………………………………. 6.6 Conclusions………………………………………………………………. 7. Conclusions and Recommendations for Future Work………………………… 7.1 Conclusions………………………………………………………………. 7.2 Recommendations for Future Work…………………………………….
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