Time-resolved photoluminescence (PL) spectroscopy has been employed to investigate the emission characteristics of oxygen-related defects in AlN in the temperature region from 77 to 500 K. Two PL components with different decay constants are observed in the near-ultraviolet to visible regions. One is the PL component with decay time of <10 ns and its peak position shifts to longer wavelengths from $350 to $500 nm with increasing temperature up to 500 K. This PL component is attributed to the radiative relaxation of photoexcited electrons from the band-edge states to the ground state of the oxygen-related emission centers. In the time region from tens to hundreds of nanoseconds, the second PL component emerges in the wavelength region from 300 to 400 nm. The spectral shape and the decay profiles are hardly dependent on temperature. This temperature-independent PL component most likely results from the transfer of photoexcited electrons from the band-edge states to the localized excited state of the oxygen-related emission centers. These results provide a detailed insight into the radiative relaxation processes of the oxygen-related defect centers in AlN immediately after the photoexcitation process. Published by AIP Publishing.
Aluminum oxynitride (AlON), which can be regarded a nitrogen-stabilized cubic c-Al 2 O 3 , has attracted attention in terms of its good mechanical, chemical, and optical stability. Because of its optical inertness, however, photoluminescence (PL) emission from nominally pure AlON has not been carefully investigated and evaluated. In this work, we prepared visibly luminescent AlON by nitridation of c-Al 2 O 3 under N 2 atmosphere without adding aluminum nitride (AlN) using a high-frequency induction heating unit. The resulting AlON exhibits a broad PL emission in the blue/green spectral region under excitation with light of~260 nm. In the luminescent AlON sample, the excitation and emission events will occur at different sites; the electron transfer from the excitation site to the emission site is preceded by the radiative recombination process. It has also been found that the PL peak wavelength shows an anomalous blue shift by~50 nm with increasing temperature from 78 to 500 K. The observed temperature dependent PL characteristics are governed by thermalization among multiple emitting levels. Aluminum vacancies and oxygen vacancies, both of which are introduced into the crystalline lattice during nitridation without the presence of AlN, are very likely candidates for the excitation and emission centers, respectively. Hence, the present direct nitridation method provides a simple and effective way to add an additional optical functionality to otherwise optically inactive AlON. K E Y W O R D Saluminum oxynitride, defects, induction heating, photoluminescence, spinel structure
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