The mobility and contact resistance of transistors based on regioregular poly(3-hexylthiophene) (P3HT) with Ti∕Pt electrodes were investigated as a function of the molecular weight (MW) of P3HT. For an increase in MW from 5.5to11kDa, the mobility increased from 0.04to0.16cm2V−1s−1, whereas the contact resistance decreased from 1.7to0.6MΩ. Further increases in MW yielded an apparent saturation in both the mobility and the contact resistance. A nanofibrilar morphology was observed where the width of the nanofibrils increases with MW. A qualitative model based on polymer chain folding is proposed to explain the electrical results.

The planarization of bottom‐contact organic field‐effect transistors (OFETs) resulting in dramatic improvement in the nanomorphology and an associated enhancement in charge injection and transport is reported. Planar OFETs based on regioregular poly(3‐hexylthiophene) (rr‐P3HT) are fabricated wherein the Au bottom‐contacts are recessed completely in the gate‐dielectric. Normal OFETs having a conventional bottom‐contact configuration with 50‐nm‐high contacts are used for comparison purpose. A modified solvent‐assisted drop‐casting process is utilized to form extremely thin rr‐P3HT films. This process is critical for direct visualization of the effect of planarization on the polymer morphology. Atomic force micrographs (AFM) show that in a normal OFET the step between the surface of the contacts and the gate dielectric disrupts the self‐assembly of the rr‐P3HT film, resulting in poor morphology at the contact edges. The planarization of contacts results in notable improvement of the nanomorphology of rr‐P3HT, resulting in lower resistance to charge injection. However, an improvement in field‐effect mobility is observed only at short channel lengths. AFM shows the presence of well‐ordered nanofibrils extending over short channel lengths. At longer channel lengths the presence of grain boundaries significantly minimizes the effect of improvement in contact geometry as the charge transport becomes channel‐limited.

Charge injection and transport in bottom-contact regioregular-poly(3-hexylthiophene) (rr-P3HT) based field-effect transistors (FETs), wherein the Au source and drain contacts are modified by self-assembled monolayers (SAMs), is reported at different channel length scales. Ultraviolet photoelectron spectroscopy is used to measure the change in metal work function upon treatment with four SAMs consisting of thiol-adsorbates of different chemical composition. Treatment of FETs with electron-poor (electron-rich) SAMs resulted in an increase (decrease) in contact metal work function because of the electron-withdrawing (-donating) tendency of the polar molecules. The change in metal work function affects charge injection and is reflected in the form of the modulation of the contact resistance, R(C). For example, R(C) decreased to 0.18 MΩ in the case of the (electron-poor) 3,5-bis-trifluoromethylbenzenethiol treated contacts from the value of 0.61 MΩ measured in the case of clean Au-contacts, whereas it increased to 0.97 MΩ in the case of the (electron-rich) 3-thiomethylthiophene treated contacts. Field-effect mobility values are observed to be affected in short-channel devices (<20 μm) but not in long-channel devices. This channel-length-dependent behavior of mobility is attributed to grain-boundary limited charge transport at longer channel lengths in these devices.

The first 8 Tbps co-packaged FPGA with Silicon-Photonics IO is presented paving the way for co-packaged compute and optical-IO. The Multi-Chip Package integrates Stratix® 10 FPGA with up to five optical IO chiplets.

The prevalent use of the diode bridge rectifier in three phase wind energy conversion systems decreases the efficiency of the power generation. In standalone wind energy generation, bridgeless converters can address this problem by eliminating the front-end diode bridge rectifier. This work presents a novel single-stage three-phase bridgeless AC to DC cùk converter for wind energy conversion systems. The proposed converter is designed to work in discontinuous inductor current mode because of its inherent power factor correction and less harmonic distortion. Using body-diodes of the MOSFETs per phase component reduction is also done in this converter. A unique maximum power point tracking technique is developed for this converter using three-phase voltages and currents, instead of the DC link states. A wind energy emulation system using a DC motor and self excited induction generator is used to test the laboratory prototype of the proposed converter. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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The physical model study of coastal structures is a nonlinear process influenced by innumerable parameters. As a result of a lack of definite systems, intricacies, and high costs involved in the physical models, we need a simple mathematical tool to predict wave transmission through quarter circular breakwater (QBW). QBW is a state-of-the-art breakwater essentially based on the exploitation of the concepts of semicircular breakwater. This paper discusses the use of soft computing tools such as MATLAB-based multiple regression (MR) and artificial neural network (ANN) to predict the wave transmission coefficient of QBW. To assess the accuracy of the proposed model and its ability to forecast, correlation coefficient and mean squared error are availed. On comparing the results obtained from MR and ANN, it is concluded that ANN gives more accurate results and can be used as a powerful tool for the modeling of hydrodynamic breakwater transmission through QBW. It serves as a viable alternative to the conventional physical model to simulate the hydrodynamic transmission performance of QBW.