A single passband microwave photonic filter with ultrawide tunable range based on stimulated Brillouin scattering is theoretically analyzed. Combining the gain and loss spectrums, tuning range with 44GHz is obtained without crosstalk by introducing two pumps. Adding more pumps, Tuning range multiplying with the multiplication factor equaling to the total quantity of pump can be achieved, which has potential application in microwave and millimeter wave wireless communication systems.

We numerically investigate the operational principle and performance of stimulated Brillouin scattering based multiple microwave frequency signals measurement. The unknown signals are processed specially to generate a gain region which is measured by phase modulation to amplitude modulation converting. By sweeping the vector network analyzer, both single and multiple frequencies measurement can be achieved. The loss spectrum generated by one of the pumps is fully compensated by the gain spectrum of the other pump, which increases the measurement range from 2νB to 4νB.

Efficiently interfacing photonic with semiconductor qubits plays an important role in future quantum communication applications. In this paper, we model a photon to exciton interface based on an optically active gate-defined quantum dot (OAQD) embedded in a carefully designed photonic crystal cavity constraining its emission profile via the Purcell effect while maintaining a low enough quality factor to allow for electrical tuning of the emission wavelength. By matching the in-plane k-vector of a cavity mode and the reciprocal lattice constant of the photonic crystal, vertical emission is obtained. A back-reflection mirror located below the cavity and integrated as part of an already predefined process flow allows for not only the increasing of the light extraction efficiency but also the tailoring of the extracted beam profile to match that of a single mode fiber. We numerically show that a photon emitted by the OAQD can be coupled to the targeted free-space Gaussian beam with a probability above 50%, limited by electrode absorption. Further efficiency improvement up to 90% is possible by using indium tin oxide instead of gold as a gate material.

SiGeSn holds great promise for enabling fully group-IV integrated photonics operating at wavelengths extending in the mid-infrared range. Here, we demonstrate an electrically pumped GeSn microring laser based on SiGeSn/GeSn heterostructures. The ring shape allows for enhanced strain relaxation, leading to enhanced optical properties, and better guiding of the carriers into the optically active region. We have engineered a partial undercut of the ring to further promote strain relaxation while maintaining adequate heat sinking. Lasing is measured up to 90 K, with a 75 K T 0 . Scaling of the threshold current density as the inverse of the outer circumference is linked to optical losses at the etched surface, limiting device performance. Modeling is consistent with experiments across the range of explored inner and outer radii. These results will guide additional device optimization, aiming at improving electrical injection and using stressors to increase the bandgap directness of the active material.

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