This paper provides a SiGe optical receiver using new high performance differential active Miller capacitor (DAMC) circuits to replace off-chip capacitors. The fully integrated design can avoid off-chip noise interference. The 4.25 Gbit/s optical receiver was realized in a commercial 0.35 µm SiGe BiCMOS process. The measured results of the receiver demonstrate a differential output swing of 530 mV with 50 Ω output loads, a crossing percentage of 51.6%, a peak-to-peak jitter (jitterp–p) of 23.9 ps, and an input sensitivity of -13.8 dBm, respectively, at a bit error rate (BER) of 10-12 with a 231-1 pseudo random binary sequences (PRBS) test pattern. The total circuit dissipates 105.6 mW under a 3.3 V supply, and the chip size is 945 ×980 µm2.
For high-speed optoelectronic applications such as fiber-optic data communication systems, photodetectors (PDs) with high responsivity in Si-related processes are required. In this letter, a result of the effort along this line is reported. A novel device named phototransistor PD (PTPD) was realized in a commercial 0.35-µm SiGe BiCMOS technology. The device combines a surface PD (SPD) and a conventional SiGe heterojunction PT (HPT). It was shown that the SPD enhanced light absorption and the PTPD showed significant performance improvement over HPT. Responsivities of 5.2 A/W for an 850-nm light and 9.5 A/W for a 670-nm light were achieved in the PTPD, with floating base and SPD terminals. Index Terms-Photodetector (PD), phototransistor (PT), responsivity.
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