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The nitrogen coimplantation characteristics in the Mg- and Be-implanted GaN with different dopant concentration ratios have been systematically investigated. The Hall-effect measurements show that the p-type characteristics are produced in the Mg- and Be-implanted GaN by the coimplantation of N atoms and subsequent annealing, which is essentially related to the column II/V dopant concentration ratio and annealing condition. This behavior may be attributed to the reduction of self-compensation induced by N vacancies and the enhanced acceptor substitution, which is in reasonable agreement with the surface stoichiometric switching determined by x-ray photoelectron spectroscopy measurements. From photoluminescence data, the activation energy of the Be acceptor level is evaluated to be about 145meV, which is shallower than that of the Mg acceptor. These experimental results indicate that the selective-area N coimplantation with Mg and Be atoms into GaN is an effective method to enhance the p-type conductivity and to improve the p-type Ohmic contact resistance.

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The effects of phosphorus implantation on the activation of magnesium doped in GaN at different dopant concentration ratios have been systematically investigated. Hall effect measurements show that P implantation improves the hole concentration, and that this improvement is dependent on P/Mg dopant concentration ratio and annealing conditions. This phenomenon is attributable to the reduction in selfcompensation that results from the formation of deep donors and the enhanced Mg atom activation, which is in reasonable agreement with the optical properties observed by photoluminescence measurements. In addition, a new photoluminescence peak resulting from P-related transitions is also observed, evidently owing to the recombination of electrons from the shallow native donors with holes previously captured by isoelectronic P traps. #