In this letter, we reported a high-k gadolinium oxide (Gd2O3) gate dielectric formed by reactive rf sputtering. It is found that the Gd2O3 gate dielectric film exhibits excellent electrical properties such as low leakage current density, high breakdown voltage, and almost no hysteresis and frequency dispersion in C-V curves comparable to that of HfO2 film. This indicates that postprocessing treatments can reduce a large amount of interface trap and can passivate a large amount of trapped charge at defect sites.
For the first time, analytical expressions of zerotemperature-coefficient (ZTC) point modeling of DTMOS transistor are successfully presented in detail. New analytical formulations for the linear and saturation regions of DTMOS transistor operation that make certain the drive current to be temperature independent for the ideal gate voltage are developed. The maximum errors of 0.87% and 2.35% in the linear and saturation regions, respectively, confirm a good agreement between our DTMOS ZTC point model and the experimental data. Compared to conventional MOSFET, the lower V g (ZTC) with higher overdrive current of DTMOS improves the integrated circuit speed and efficiency for the low-power-consumption concept in green CMOS technology.
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