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We have developed a new reliable method combining template synthesis and nanolithography-based contacting technique to elaborate current perpendicular-to-plane giant magnetoresistance spin valve nanowires, which are very promising for the exploration of electrical spin transfer phenomena. The method allows the electrical connection of one single nanowire in a large assembly of wires embedded in anodic porous alumina supported on Si substrate with diameters and periodicities to be controllable to a large extent. Both magnetic excitations and switching phenomena driven by a spin-polarized current were clearly demonstrated in our electrodeposited NiFe/Cu/ NiFe trilayer nanowires. This novel approach promises to be of strong interest for subsequent fabrication of phase-locked arrays of spin transfer nano-oscillators with increased output power for microwave applications.

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This study focuses on the thermoelectric properties of the Heusler-type Fe2VTaxAl1−x alloys (0≤x≤0.12). By means of Rietveld analyses on synchrotron X-ray diffraction patterns, it is shown that the Ta atoms enter sites occupied by V atoms in the stoichiometric Fe2VAl alloy, while the ejected V atoms are transferred to the vacant Al sites. This Ta substitution leads to an improvement of the n-type thermoelectric properties owing to two mechanisms. On the one hand, the atoms position in the structure leads to an off-stoichiometric effect such as already observed in V-rich Fe2V1+yAl1−y compounds: the Seebeck coefficient is increased towards negative absolute values and the electrical resistivity is decreased, with a large shift of their peak temperature towards higher temperature. The maximum power factor is 6.5 × 10−3 W/mK2 for x = 0.05 at 340 K. On the other hand, the heavy element Ta substitution combined with this off-stoichiometric effect leads to a large decrease of the thermal conductivity, owing to an increase of the scattering events. Consequently, the dimensionless figure of merit is seen to reach higher values than for the Fe2V1+yAl1−y alloys, i.e., 0.21–0.22 around 400–500 K for x = 0.05 and 500 K for x = 0.08.

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