Two metal elements, Sn and Na, have been deposited onto layered semiconductor MoS2(0001) surfaces and observed with a scanning tunneling microscope. The metal-adsorbed area shows a very large dark spot (3–5nm diameter) when the sample bias is positive, and the atomic image of the MoS2 substrate can be clearly seen inside the dark area. The same area, on the other hand, shows a bright horseshoe-shaped spot when the sample bias is negative.
We clarified that the fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel “double titanium deposited silicide (DTD)” process has been developed. The key point of this process is the deposition and subsequent removal of dummy titanium before silicidation. Contaminated silicon and gate poly-silicon surface layer caused by reactive ion etching was removed perfectly and an ultra-clean surface was obtained. As a result, low sheet resistance (3 Ω/\Box) was obtained in both n+ and p+ very fine 0.1 µm gates.
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