A hole mobility of ∼200 cm2 V-1 s-1 was demonstrated for GaAs1-x
Bi
x
(x ≤4%). This value is comparable to that of GaAs with the same hole concentration. The hole mobility of GaAs1-x
Bi
x
(x ≈5%) degrades, but is still larger than the reported values for GaAs1-x
Bi
x
. Despite concerns regarding the degradation of hole mobility in GaAs1-x
Bi
x
due to scattering at Bi-related localized states near the valence band, p-type GaAs1-x
Bi
x
was able to be obtained without degradation of hole mobility. This is probably owing to the surfactant effect of the bismuth atoms during growth.
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