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1. Equation (3.13) should read E N = 2 27βε 3 00 ε 3 0 instead of E N = 2 27βε 3 00 . 2. Equation (3.22) should read:3. Sentence after Eq. (3.22) on page #16 should read:"In the limit of small concentration of the dielectric material in the mixture (q 1) and when ε f /ε d 1, the last two terms in the Eq. (3.22) can be neglected and the renormalized electric field E * in Eq. (3.20) become equal to the electric field E 0 ." instead of: "In the limit of small concentration of the dielectric material in the mixture (q 1) and when ε f /ε d 1, the last three terms in the Eq. (3.22) can be neglected and the renormalized electric field E * in Eq. (3.20) become equal to the electric field E 0 ." 4. Equation for the matrix G ts on page #16 should read G ts = 3n t n s − δ ts instead of G ts = 3n + ns − δ ts . 5. Sentence after equation for the matrix G ts on page #16 should read: "where n = ( r − r i )/| r − r i | and δ ts is the Kroneker symbol." instead of: "where n = ( r − r i )/| r − r i | and δ is the Kroneker symbol. Where ϕ and θ are the azimuthal and polar angles of the vector r − r i ."

Using pulsed-laser deposition, a two-step growth technique was applied to epitaxial SrTiO3 (STO) thin films on LaAlO3 substrates providing a way to obtain an effective strain relaxation in these films otherwise strained due to lattice mismatch between film and substrate. By changing the thickness of a first layer, deposited at a temperature as low as 100°C before the deposition of the main layer at 750°C, different strain relaxation states of the films could be systematically realized. With a 10-nm-thick first layer, an almost full strain relaxation at the deposition temperature of the main layer was achieved, suggesting a strong impact of this method on strain relaxation. The in-plane dielectric measurements displayed that the ferroelectric transition temperature increases with strain relaxation during the growth. This trend is correct and compatible with the theoretical prediction of the behavior of strained STO derived from Landau theory.

The nonlinear response of ferroelectric BaxSr1−xTiO3 films to microwave electric field intensity up to ∼3×106 V/m was studied. Two techniques were used for this investigation: (i) 10 GHz pulsed power measurements, and (ii) 4 GHz intermodulation distortion (IMD) measurements. The nonlinear distortion of the resonant curve under microwave pulsed power and generation of the third-order IMD products in microwave resonators using ferroelectric film planar capacitors were measured. The use of microwave pulses and continuous signals enabled the separation of the nonlinear dielectric response from the heating response of the ferroelectric films and the microwave nonlinear parameters of the ferroelectric films to be determined. It is shown that up to a specified value of microwave voltage amplitude the nonlinear response of BaxSr1−xTiO3 film capacitors can be predicted from the small signal capacitance–voltage characteristics. Formulas to estimate power handling capability connected with the field dielectric nonlinearity and the film overheating are derived for the tunable microwave devices based on ferroelectric films.