Raman microprobe studies of long crystalline Si nanowires reveal for the first time the evolution of phonon confinement with wire diameter. The Raman band at approximately 520 cm-1 in bulk Si is found to downshift and asymmetrically broaden to lower frequency with decreasing wire diameter D, in good agreement with a phenomenological model first proposed by Richter et al. An adjustable parameter (alpha) is added to the theory that defines the width of the Gaussian phonon confinement function. We find that this parameter is not sensitive to diameter over the range 4-25 nm.

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Results are presented of in situ studies of the thermoelectric power and four-probe resistance of single-walled carbon nanotube films during the adsorption of cyclic hydrocarbons C(6)H(2n) (n=3-6). The size of the change in these transport parameters is found to be related to the pi electron population of the molecule, suggesting the coupling between these pi electrons and those in the nanotube wall may be responsible for the observed effects. A transport model for the SWNT film behavior is presented, incorporating the effects of a new scattering channel associated with the adsorbed molecules.

We report results of studies on the sheet resistance and optical transmission of thin films of boron-doped single-walled carbon nanotubes (SWNTs). Boron doping was carried out by exposure of SWNTs to B 2O 3 and NH 3 at 900 degrees C and 1-3 atom % boron was found in the SWNT bundles via electron energy loss spectroscopy (EELS). Boron doping was found to downshift the positions of the optical absorption bands associated with the van Hove singularities (E 11 (s) E 22 (s) and E 11 (m)) by approximately 30 meV relative to their positions in acid-treated and annealed SWNTs. Raman spectroscopy, EELS, and optical data are consistent with the picture that a few atom % boron has been substituted for carbon in the sp (2) framework of SWNTs. Finally, our results show that boron doping does not significantly affect the optical transmittance in the visible region. However, boron doping lowers the sheet resistance by approximately 30% relative to pristine SWNT films from the same batch. Boron-doped SWNT may provide a better approach to touch-screen technology.

Gallium phosphide nanowires with a most probable diameter of approximately 20.0 nm and more than 10 microns in length have been synthesized by pulsed laser vaporization of a heated GaP/5% Au target. The morphology and microstructure of GaP nanowires have been investigated by scanning electron microscopy and transmission electron microscopy. Twins have been observed along the crystalline nanowires, which have a growth direction of [111]. Raman scattering shows a 4 cm-1 downshift of the longitudinal optical phonon peak in the nanowire with respect to the bulk; the transverse optical phonon frequency and line width are, however, the same as in the bulk. The quantum confinement model first proposed by Richter et al. cannot explain the observed behavior of the Raman modes.

Electrical transport (resistance R and thermoelectric power S), Raman scattering, and hydrogen adsorption are used to study the interaction of hydrogen molecules with ropes of single-walled carbon nanotubes. The data are consistent with H 2 physisorption under the experimental conditions investigated (4 KoTo500 K; 0.1 atmoPo20 atm). The response of S; R to 1 atm hydrogen at 500 K is consistent with the introduction of a new scattering channel for electrons/holes in the metallic tubes. Raman scattering from the Q-branch of hydrogen molecules adsorbed on the surface is found shifted only by 1-2 cm À1 from their frequencies in the free molecule and indicates that two different adsorption sites can be detected. Finally, H 2 wt% storage in heavily processed ropes of SWNTs are found to exceed 6% at B1 atm and T ¼ 77 K and the isosteric heat of adsorption is found to be 120 meV. r

The blueshift of the optical absorption edge along with the intense red photoluminescence (PL) peak has been observed from micron-long crystalline silicon nanowires prepared by pulsed-laser vaporization of heated Si (mixed with metal catalyst) targets. Previous studies on the confinement in silicon nanostructures resulted in a dispute regarding the application of theoretical models to explain their optical properties. Based on the microstructure a phenomenological confinement model, incorporating the nanowire diameter distribution is used, which is found to describe the optical properties including the shape of absorption spectra, the band gap, and the PL peak position of the Si nanowires very well.