Quantum-enhanced optical systems operating within the 2 μm spectral region have the potential to revolutionise emerging applications in communications, sensing and metrology. However, to date, sources of entangled photons have been realised mainly in the near-infrared 700-1550 nm spectral window. Here, using custom-designed lithium niobate crystals for spontaneous parametric down-conversion and tailored superconducting-nanowire single-photon detectors, we demonstrate two-photon interference and polarisation-entangled photon pairs at 2090 nm, i.e. in the mid-infrared and significantly beyond existing technology. These results open the 2 μm window for the development of optical quantum technologies such as quantum key distribution in nextgeneration mid-infrared fibre communications systems and novel Earth-to-satellite communications that exploits reduced atmospheric scattering in a spectral region with a reduced solar background.

We report on the optimisation of amorphous molybdenum silicide thin film growth for superconducting nanowire single-photon detector (SNSPD) applications. Molybdenum silicide was deposited via co-sputtering from Mo and Si targets in an Ar atmosphere. The superconducting transition temperature (Tc) and sheet resistance (Rs) were measured as a function of thickness and compared to several theoretical models for disordered superconducting films. Superconducting and optical properties of amorphous materials are very sensitive to short- (up to 1 nm) and medium-range order (∼1–3 nm) in the atomic structure. Fluctuation electron microscopy studies showed that the films assumed an A15-like medium-range order. Electron energy loss spectroscopy indicates that the film stoichiometry was close to Mo83Si17, which is consistent with reports that many other A15 structures with the nominal formula A3B show a significant non-stoichiometry with A:B > 3:1. Optical properties from ultraviolet (270 nm) to infrared (2200 nm) wavelengths were measured via spectroscopic ellipsometry for 5 nm thick MoSi films indicating high long wavelength absorption. We also measured the current density as a function of temperature for nanowires patterned from a 10 nm thick MoSi film. The current density at 3.6 K is 3.6 × 105 A cm−2 for the widest wire studied (2003 nm), falling to 2 × 105 A cm−2 for the narrowest (173 nm). This investigation confirms the excellent suitability of MoSi for SNSPD applications and gives fresh insight into the properties of the underlying materials.

No abstract

We present low temperature nano-optical characterization of a silicon-on-insulator (SOI) waveguide integrated SNSPD. The SNSPD is fabricated from an amorphous Mo 83 Si 17 thin film chosen to give excellent substrate conformity. At 350 mK, the SNSPD exhibits a uniform photoresponse under perpendicular illumination, corresponding to a maximum system detection efficiency of approximately 5% at 1550 nm wavelength. Under these conditions 10 Hz dark count rate and 51 ps full width at half maximum (FWHM) timing jitter is observed. #260601

No abstract