Graphene-based point-of-care (PoC) and chemical sensors can be fabricated using photolithographic processes at wafer-scale. However, these approaches are known to leave polymer residues on the graphene surface, which are difficult to remove completely. In addition, graphene growth and transfer processes can introduce defects into the graphene layer. Both defects and resist contamination can affect the homogeneity of graphene-based PoC sensors, leading to inconsistent device performance and unreliable sensing. Sensor reliability is also affected by the harsh chemical environments used for chemical functionalisation of graphene PoC sensors, which can degrade parts of the sensor device. Therefore, a reliable, wafer-scale method of passivation, which isolates the graphene from the rest of the device, protecting the less robust device features from any aggressive chemicals, must be devised. This work covers the application of molecular vapour deposition technology to create a dielectric passivation film that protects graphene-based biosensing devices from harsh chemicals. We utilise a previously reported “healing effect” of Al2O3 on graphene to reduce photoresist residue from the graphene surface and reduce the prevalence of graphene defects to improve graphene device homogeneity. The improvement in device consistency allows for more reliable, homogeneous graphene devices, that can be fabricated at wafer-scale for sensing and biosensing applications.

High‐quality, alumina thin films are extensively used as dielectrics, passivation layers, and barrier layers in electronics and many other applications. However, to achieve optimum stoichiometry and thus performance, the layers are often grown at elevated temperatures (>200 °C) using techniques such as atomic layer deposition (ALD). This is problematic for substrates or structures with low thermal budgets. Herein, alumina thin films are grown on 200 mm silicon substrates employing a versatile deposition method known as MVD at low deposition temperatures (35–150 °C). The chemical composition of the resulting films is investigated postdeposition using X‐ray photoelectron spectroscopy (XPS) and variable angle spectroscopic ellipsometry, with fully stoichiometric Al2O3 achieved at deposition temperatures as low as 100 °C. Dielectric measurements confirm outstanding dielectric properties compared to typical thermal ALD layers deposited at much higher temperatures. This low‐temperature deposition performance by considering the MVD reactor design and the “pump‐type” regime of precursor delivery versus the “flow‐type” regime of ALD is rationalized and understood. The results clearly demonstrate that alumina thin films grown with MVD are highly versatile for electronic applications and are of particular relevance and interest for the high‐volume processing of dielectric, passivation, and barrier layers at low temperatures.