We propose a novel sensor system for monitoring the structural health of a building. The system optically measures the relative-story displacement during earthquakes for detecting any deformations of building elements. The sensor unit is composed of three position sensitive detectors (PSDs) and lenses capable of measuring the relative-story displacement precisely, even if the PSD unit was inclined in response to the seismic vibration. For verification, laboratory tests were carried out using an Xθ-stage and a shaking table. The static experiment verified that the sensor could measure the local inclination angle as well as the lateral displacement. The dynamic experiment revealed that the accuracy of the sensor was 150 μm in the relative-displacement measurement and 100 μrad in the inclination angle measurement. These results indicate that the proposed sensor system has sufficient accuracy for the measurement of relative-story displacement in response to the seismic vibration.
We have developed a novel sensor that enables us to measure the relative story displacement of a building structure in real time. This lateral displacement sensor (LDS) is composed of a light‐emitting diode (LED) array, which is fixed on the ceiling, and a position‐sensitive detector (PSD) unit, which is placed on the floor. We optimized the LDS to achieve high accuracy in lateral displacement measurement. The accuracy was evaluated to be 60 µm by conducting shaking table tests. Two LDSs were implemented in an actual building equipped with an active variable stiffness (AVS) system, and the building was vibrated with seismic waveforms by an exciter placed on the rooftop. The seismic displacement of the second floor relative to the first floor was measured using the LDS. Furthermore, the inclination angle of the second floor could be measured using the LDS during the seismic vibration. Using the AVS system, we realized the residual displacement of the second floor without inducing damage to the building, and succeeded in real‐time residual displacement measurement for the first time. These results indicate that the LDS is useful for the health diagnosis of a building structure. © 2011 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.
We propose a novel sensor for directly measuring the relative displacement of a building structure. The sensor is composed of a laser light source and a phototransistor (PT) array. The PT array is immobilized on the floor together with a photo scattering plate made of glass, whereas the laser light source is separately immobilized on the ceiling. The photo scattering plate is placed in front of the PT array and distributes the laser beam on the multiple PTs. The relative displacement between the ceiling and the floor is estimated by the distribution of the PT output voltages, and the displacement is estimated with a resolution finer than the interval between the PTs. The accuracy of the relative displacement sensor (RDS) is experimentally assessed by conducting a shaking table test exhibiting several waves from harmonic sinusoidal waves to real seismic waves. We discuss the feasibility of real-time monitoring system utilizing this sensor.
SUMMARYInter-story drift displacement data can provide useful information for story damage assessment. The authors' research group has developed photonic-based sensors for the direct measurement of inter-story drift displacements. This paper proposes a scheme for evaluating the degree of damage in a building structure based on drift displacement sensing. The scheme requires only measured inter-story drift displacements without any additional finite element analysis. A method for estimating yield drift deformation is proposed, and then, the degree of beam end damage is evaluated based on the plastic deformation ratios derived with the yield drift deformation values estimated by the proposed method. The validity and effectiveness of the presented scheme are demonstrated via experimental data from a large-scale shaking table test of a one-third-scale model of an 18-story steel building structure conducted at E-Defense.
Radiation damages created in silicon single crystals bombarded with 10-keV aluminum ions were examined by means of electron diffraction method. A deep penetration of aluminum ion in silicon was observed, extending to 0.58 μ. This penetration was depressed by removing the bombarded surface layer about 800 Å in thickness before annealing. From these results, we interpret the deep penetration as a radiation enhanced diffusion effect.
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