Surface plasmon lasing in semiconductor gain media at far-infrared frequencies requires simultaneously long non-radiative recombination times and large plasmon propagation length. In this paper, we show that these conditions are realized in mercury-telluride quantum wells (HgTe QWs) near the topological transition. We derive the conditions of surface plasmon amplification in HgTe QWs with interband population inversion. To this end, we calculate the spatially-dispersive high-frequency conductivity of pumped HgTe QWs taking into account their realistic band structure, and compare the interband gain with Drude absorption and collisionless Landau damping. An extra necessary condition of plasmon lasing is revealed, namely, the non-equilibrium carrier density should be high enough to make the plasmon spectrum overlap with the frequency domain of interband excitations. The latter condition limits the processes of both stimulated and spontaneous plasmon emission at low temperatures, and should have a strong impact on the recombination kinetics of HgTe QWs at low temperatures.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.