In this study, the characterizations of oxide contact hole etching are investigated with C 4 F 8 /O 2 /Ar and CH 2 F 2 /C 4 F 8 /O 2 / Ar plasma. As the percent composition of C 4 F 8 in a C 4 F 8 /O 2 /Ar mixture increases, the amount of polymer deposited on the etched surface also increases because the C x F y polymer layer retards the reaction of oxygen atoms with PR. Adding CH 2 F 2 into the C 4 F 8 /O 2 /Ar plasma increases the etch rate of the oxide and the selectivity of oxide to PR. The profile of contact holes was close to 90 o , and no visible residue was seen in the SEM image at a C 4 F 8 /(C 4 F 8 +O 2 ) ratio of 58%. The changes of chemical composition in the chamber were analyzed using optical emission spectroscopy, and the chemical reaction on the etched surface was investigated using X-ray photoelectron spectroscopy.
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