The practical limits of coinage-metal-based plasmonic materials demand sustainable, abundant alternatives with a wide plasmonic range of the solar energy spectrum. Aluminum (Al) is an emerging alternative, but its instability in aqueous environments critically limits its applicability to various light-harvesting systems. Here, we report a design strategy to achieve a robust platform for plasmon-enhanced light harvesting using Al nanostructures. The incorporation of mussel-inspired polydopamine nanolayers in the Al nanoarrays allowed for the reliable use of Al plasmonic resonances in a highly corrosive photocatalytic redox solution and provided nanoscale arrangement of organic photosensitizers on Al surfaces. The Al-photosensitizer core-shell assemblies exhibited plasmon-enhanced light absorption, which resulted in a 300% efficiency increase in photo-to-chemical conversion. Our strategy enables stable and advanced use of aluminum for plasmonic light harvesting.
In this study, organic photovoltaic devices with single or double-layered active film were prepared from a stamping transfer technique. A P3HT/PCBM single-layered active layer and a ratio-controlled P3HT/PCBM double-layered active can be successfully fabricated with the help of ultraviolet curable polycarbonate films via a stamping transfer technique. The maximum conversion efficiency values 2.85 for a single active layer transferred device and 3.24% for an optimized double active layer transferred device. Even though transferred double layers should have a sharp interface boundary, an intermixed zone with a concentration gradient was generated by the interpenetration of a donor-rich layer and an acceptor-rich layer in a thermal annealing process. The generation of the intermixed zone is confirmed by Auger electron spectroscopy. The enhanced conversion efficiency levels are attributed to the increased efficiency of the carrier transporting process, which is due to the fact that the concentration gradient is combined with the efficient charge generation from the bulk heterojunction layers.
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