The properties of 100-nm-thick reactively sputter-deposited TiN films with different deposition conditions and one chemical-vapor-deposited film have been studied as diffusion barriers between Cu and Si by using sheet resistance measurements, x-ray diffractometry, etch-pit test, and Auger electron spectroscopy (AES). Based on Rutherford backscattering spectrometry (RBS), AES, and transmission electron microscopy (TEM) analyses, the relationship between the density, oxygen content, and microstructure of the as-deposited TiN film has been established. As the density of the TiN film decreases, the microstructure of the film becomes porous and the oxygen content in the film increases. The result of the etch-pit test has shown that the failure temperature of the TiN diffusion barrier varies from 500 to 750 °C, depending upon the microstructure of the film. It is concluded that high density of the TiN film is of primary importance in achieving a good diffusion barrier performance between Cu and Si.
31093. The results of free energy calculation indicate that the main adsorption species are dissolved neutral hydroxides.4. The main adsorption species have proved to be the dissolved neutral hydroxide complexes for Fe(III) and Ni(II), because the calculated gradient of pH dependent distribution of neutral species agreed well with the experimental gradient of adsorption. ABSTRACTThe diffusion barrier properties of 100 nm thick TiN films, both as deposited and annealed, were investigated in the Cu/TiN/Si metallization system using sheet resistance measurements, etch pit observation, x-ray diffractometry, and cross-sectional transmission electron microscopy (XTEM). No reaction of the Cu with TiN layer was observed up to 650~ for 1 h. However, by Secco etching of the Si surface, etch pits were first observed after annealing at 550~ for 1 h. XTEM analysis shows that the in-diffusion of Cu results in the formation of dislocations in the Si substrate along the projection of Si {111} plane and precipitates (presumably Cu silicides) around the dislocation. Considerable densification of TiN film was achieved by annealing at 450~ for 30 min in N2 ambient. In A1/TiN/Si system, it is shown that barrier properties are enhanced by annealing the TiN prior to A1 deposition. However, in Cu/annealed TiN/St system, the postannealing temperature at which etch pits are first observed is still 550~ and the size and density of etch pits are similar to the case of as-deposited TiN. Thus, we conclude that annealing of TiN film does not enhance the diffusion barrier property of TiN in Cu/TiN/Si system as it does in A1/TiN/Si system.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.