In this presentation we will discuss the performance and limitations of our 220 channel video rate passive millimeter wave imaging system based on a distributed aperture with optical upconversion architecture. We will cover our efforts to reduce the cost, size, weight, and power (CSWaP) requirements of our next generation imager. To this end, we have developed custom integrated circuit silicon-germanium (SiGe) low noise amplifiers that have been designed to efficiently couple with our high performance lithium niobate upconversion modules. We have also developed millimeter wave packaging and components in multilayer liquid crystal polymer (LCP) substrates which greatly improve the manufacturability of the upconversion modules. These structures include antennas, substrate integrated waveguides, filters, and substrates for InP and SiGe mmW amplifiers.
Thin crystalline silicon layers on an insulating ceramic substrate permit the realization of a seriallyinterconnected monolithic array. In this paper we present the device design and fabrication issues relating to such a monolithically integrated device, and the latest results are presented. A novel device process is presented that involves isolating and re-interconnecting silicon solar cell elemcnts on an insulating ceramic substrate. Device efficiencies of 7.3% have been achieved. and are presently limited by high series resistance and chemical impurities.
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