Conexant's reliability infrastructure was utilized to determine the reliability of next generation InGaP/GaAs heterojunction bipolar transistors (HBT's). The investigated lnGaP HBT's were subjected to stresses at three junction temperatures and three current densities, in order to extract both thermal and current acceleration factors. The primary failure mode we identified for all stress conditions is sudden Beta degradation characterized by an increase of base current over time. The thermal activation energy was extracted to be 0.97eV for Beta degradation. The current acceleration of transistor lifetime is modeled as a power law relationship and we have extracted a square root dependence of lifetime on current density.
The reliability of InGaP/GaAs heterojunction bipolar transistors (HBT's) under high emitter current density stress has been investigated. The current acceleration of transistor lifetime is modeled as a power law relationship. Over a range of 25Wcm' to 150kA/cm2, we have extracted a square root dependence of lifetime on current density. These results compare with an approximate square law result measured on AlGaAs HBT's.
GCS has successfully developed a high performance and manufacturable 4-inch lnP HBT technology for commercial pure-play foundv services. In this paper, we demonstrated that with our proprietary device design and process technology, GCS 's 1nP HBTs show potentiallv excellent reliability under lifetests at current densities of 1 OOkA/cm2 or higher. The vhc's at both low and high current densities have little shift i'y to 4000hrs under ISOkA/cm', which indicates that the C-doped InP HBT is potentially much more stable compared to Be-doped InP HBT for high current density operation. The emitter resistance also shows very stable behavior over the stress time under high current density stresses.
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