Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire (002) and glass substrates by two different sputtering techniques radio frequency magnetron cosputtering of AZO and ZnO targets and sputtering of an AZO target. The dependence of the photoluminescence (PL) and transmittance properties of the AZO films deposited by cosputtering and sputtering on the AZO/ZnO target power ratio, R and the O 2 /Ar flow ratio, r were investigated, respectively. Only a deep level emission peak appears in the PL spectra of cosputtered AZO films whereas both UV emission and deep level emission peaks are observed in the PL spectra of sputtered AZO films. The absorption edges in the transmittance spectra of the AZO films shift to the lower wavelength region as R and r increase. Also effects of crystallinity, surface roughness, PL on the transmittance of the AZO films were explained using the X-ray diffraction (XRD), atomic force microscopy (AFM), and PL analysis results.
ZnO:Al thin films for transparent conductors were deposited on sapphire (0001) substrates by using an RF magnetron sputtering technique. Effects of the O 2 /Ar flow ratio in the sputtering process on the crystallinity, carrier concentration, carrier mobility, and transmittance of the films were investigated. The FWHM of the (002) XRD intensity peak is minimal at the O 2 /Ar flow ratio of 0.5. According to the Hall measurement results the carrier concentration and mobility of the film decrease and thus the resistivity increases as the O 2 /Ar flow ratio increases. The transmittance of the ZnO:Al film deposited on the glass substrate is characteristic of standing wave. The transmittance increases as the O 2 /Ar flow ratio in-RF magnetron sputtering increases up to 0.5. Considering the effects of the the O 2 /Ar flow ratio on the electrical resistivity and transmittance of the ZnO:Al film the optimum O 2 /Ar flow ratio is 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.
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