Chemical bath deposition (CBD) was used as a method to deposit CdSe thin films for use in CdTe solar cells. Solution parameters such as precursor stoichiometry, concentration and deposition time, were varied to assess the impact on the morphology of the CdSe films deposited on FTO coated glass. The solution precursors were cadmium acetate and sodium selenosulphite with NH3 used as a complexant to control the release of ions into the solution. It was seen that particle size, surface coverage and thickness were successfully controlled. CdSe films were grown with a band gap of ~1.74 eV and were made into full devices with CdTe. A ternary compound of CdTe1-xSex formed with a band gap of ~1.40 eV, which was shown in an improved EQE in the IR, as well as an improved Jsc. The best device, with an efficiency of 12.3% was produced from a 280 nm thick film with a surface coverage of 59% and grain size of ~600 nm. An increased response at longer wavelengths due to the lowered band gap resulted in a high JSC value of 28.2 mA cm -2 suggesting efficient intermixing of the CdSe into the CdTe1-xSex layer.
Cadmium selenide (CdSe) thin films deposited using chemical bath deposition and pulsed DC magnetron sputtering are compared for use in cadmium telluride/selenide (CST) photovoltaic (PV) devices. Full devices were made from the bath and sputtered films using a cadmium chloride (CdCl2) treatment temperature of 425°C, this gave an overall efficiency of 9.3% and 3.2% respectively. Photoluminescence (PL) of the sputtered sample confirmed a bandgap was present of 1.58 eV which suggested poor diffusion at 425°C. A (CdCl2) treatment temperature of 465°C gave a large PL peak at 1.37 eV which corresponds to the bandgap of CST, indicating diffusion was more effective at this temperature.
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