Reservoir computing is a brain heuristic computing paradigm that can complete training at a high speed. The learning performance of a reservoir computing system relies on its nonlinearity and short-term memory ability. As physical implementation, spintronic reservoir computing has attracted considerable attention because of its low power consumption and small size. However, few studies have focused on developing the short-term memory ability of the material itself in spintronics reservoir computing. Among various magnetic materials, spin glass is known to exhibit slow magnetic relaxation that has the potential to offer the short-term memory capability. In this research, we have quantitatively investigated the short-term memory capability of spin cluster glass based on the prevalent benchmark. The results reveal that the magnetization relaxation of Co, Si-substituted Lu3Fe5O12 with spin glass behavior can provide higher short-term memory capacity than ferrimagnetic material without substitution. Therefore, materials with spin glass behavior can be considered as potential candidates for constructing next-generation spintronic reservoir computing with better performance.
Spin waves (SWs), an ultra-low power magnetic excitation in ferro or antiferromagnetic media, have tremendous potential as transport less data carriers for post-CMOS technology using their wave interference properties. The concept of magnon interference originates from optical interference, resulting in a historical taboo of maintaining an identical wavevector for magnon interference-based devices. This makes the attainment of on-chip design reconfigurability challenging owing to the difficulty in phase tuning via external fields. Breaking the taboo, this study explores a novel technique to systematically control magnon interference using asymmetric wavevectors from two different SW modes (magnetostatic surface SWs and backward volume magnetostatic SWs) in a microstructured yttrium iron garnet crossbar. Using this system, we demonstrate phase reconfigurability in the interference pattern by modulating the thermal landscape, modifying the dispersion of the interfering SW modes. Thus, we manifest that such a tunable interference can be used to implement reconfigurable logic gates operating between the XNOR and XOR modes by using symmetric and asymmetric interference, respectively.
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