Nanosized inverted domain dots in ferroelectric materials have potential application in ultrahigh density rewritable data storage systems. Herein, a data storage system is presented based on scanning non-linear dielectric microscopy and a thin film of ferroelectric single-crystal lithium tantalite. Through domain engineering, we succeeded in forming our smallest artificial nanodomain single dot at 5.1 nm diameter and an artificial nanodomain dot array with a memory density of 10.1 Tbit inch(-2) and a bit spacing of 8.0 nm, representing the highest memory density for rewritable data storage reported to date. Subnanosecond (500 ps) domain switching speed has also been achieved. Next, actual information storage with a low bit error and high memory density was performed. A bit error ratio of less than 1 × 10(-4) was achieved at an areal density of 258 Gbit inch(-2). Moreover, actual information storage is demonstrated at a density of 1 Tbit inch(-2).
An investigation of ultrahigh-density ferroelectric data storage based on scanning nonlinear dielectric microscopy (SNDM) is described. To obtain fundamental knowledge of high-density ferroelectric data storage, several studies of nanodomain formation in a congruent lithium tantalate single crystal were conducted. This paper is a summary report consisting of the most recent experimental data from investigations of ferroelectric high density data storage.
Nanosized inverted domain dots in ferroelectric materials have potential application in ultrahigh-density rewritable data storage systems. Herein, a data storage system is presented based on scanning nonlinear dielectric microscopy and a thin film of ferroelectric single-crystal lithium tantalite. Through domain engineering, nanosized inverted domain dots have been successfully formed at a data density above 10.1Tbit∕in.2 and subnanosecond (500ps) domain switching speed has been achieved. Moreover, actual information storage is demonstrated at a density of 1Tbit∕in.2
A new method to achieve real information recording with a density above 1 Tbit/ in. 2 in ferroelectric data storage systems is proposed. In this system, data bits were written in the form of the polarization direction, and the data were read by scanning nonlinear dielectric microscopy technique. The domain-switching characteristics of the virgin and inversely prepolarized media were compared, and the conditions of the pulse voltage for writing were optimized. As a result, actual data containing 64ϫ 64 bits were recorded at an areal density of 4 Tbit/ in.2 . The bit error rate was evaluated to be 1.2ϫ 10 −2 . © 2010 American Institute of Physics. ͓doi:10.1063/1.3463470͔With current advances in information processing technology, the importance of high-density data storage devices continues to increase. As an alternative to magnet storage, recording system with polymer layer media using thermomechanical effect and ferroelectric data storage system are being developed.1,2 Ferroelectrics can hold bit information in the form of the polarization direction of individual domains.3-8 Moreover, the domain walls in typical ferroelectric materials is as thin as a few lattice parameters, 9,10 suitable for high-density data storage media. Up to now, recording with a density of around 10 Tbit/ in.2 in very small areas in a medium has been achieved by forming several dots, and the smallest single nanodomain dot with a size of 2.8 nm diameter was successfully formed.11 However, recording of real information data with a density of over 1 Tbit/ in. 2 has not yet been achieved. This is because real information is complex and nonuniform and so is difficult to write successfully. In this letter, we describe an approach to high-density data storage with a density above 1 Tbit/ in.2 in a ferroelectric material.Scanning nonlinear dielectric microscopy ͑SNDM͒ is the first successful purely electrical method for observing ferroelectric polarization distributions with subnanometer resolution.12-14 We used SNDM as the information storage and playback apparatus. Writing information is carried out by applying relatively large voltage pulses to the ferroelectric recording medium, and thereby the polarization direction is locally switched. The pulse generator is connected to the bottom electrode of the medium; thus, positive domains ͑which appear on the probe side surface of the medium͒ are written by positive voltage pulses, while negative domains are written by negative pulses. The dark and bright dots shown in the images in this report represent negative and positive domains, or "1" and "0" data bits, respectively. The read and write ͑R/W͒ head was required to be controlled with high location precision and high stability for high-density recording, and therefore, we developed SNDM with low location drift, which was evaluated to be 0.2 nm/min.Single crystal congruent LiTaO 3 ͑CLT͒ was selected as the recording medium. We fabricated an ultrathin, uniform CLT medium by mechanically polishing a single crystal followed by dry etching. 15 The thick...
In this study, several read/write tests were conducted using a novel ferroelectric data storage test system equipped with a spindle motor, targeted at high-speed data transfer using a single probe head. A periodically inverted signal can be read out correctly with a bit rate of 100 kbps using this test system, and 10 Mbps data transfer is also possible during writing operations. The effect of a dc-offset voltage applied to the writing waveform with high-speed probe scanning is discussed. In addition, a novel noncontact probe height control technique was adopted to solve the problem of tip abrasion.
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