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Abstract. In this paper, we study finite symplectic actions on K3 surfaces X, that is, actions of finite groups G on X which act on H 2,0 (X) trivially. We show that the action on the K3 lattice H 2 (X, Z) induced by a symplectic action of G on X depends only on G up to isomorphism, except for five groups. Contents

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An increasing incidence of Pneumocystis jiroveci pneumonia (PCP) in patients with B-cell non-Hodgkin lymphoma (B-NHL) receiving rituximab treatment has been reported. We reviewed patients with B-NHL who underwent chemotherapy from 2004 to 2008 at our institution to identify risk factors for PCP development during and after chemotherapy. Among 297 patients with B-NHL, six developed PCP. Of 121 patients (41%) who received PCP prophylaxis with sulfamethoxazole–trimethoprim during chemotherapy, none developed PCP (0%), while among 176 patients (59%) who had no prophylaxis, six (3.4%) developed PCP at a median of 2 months (range: 1–3 months) after starting chemotherapy. Patients with CD4+ lymphocyte counts ≤200/mm3 before chemotherapy had a higher risk of developing PCP (p=0.045), while a history of rituximab treatment was not related to PCP. CD4+ lymphocyte counts ≤200/mm3 during and after chemotherapy were observed in 18.9% of patients.

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Rf plasma chemical vapor deposition from silane was numerically analyzed. When a substrate was moved away from the plasma, gas-phase polymerization increased the contribution of oligomer radicals to film deposition. In addition, the contribution of silylene radicals became lower compared with that of silyl radicals. As a result of the trade-off between these two effects, an optimal plasma-substrate distance, where a high-quality a-Si:H film was obtained, appeared. Dilution of feed silane with hydrogen effectively reduced gas-phase polymerization and enhanced the generation of hydrogen radicals that create silyl radicals selectively through a reaction with silane. Improvement of the film quality as a result of plasma-substrate separation and hydrogen dilution was thus explained by the change in the composition of film precursors.

A heat pulse method for determination of thermal diffusivity of liquid crystals is described. It is based on measurement of temperature rise by a sensing electrode when a heat pulse is given by a heating electrode. From curve-fitting between experimental results and the solution of equation of heat conduction, thermal diffusivity of liquid crystals can be determined. This method is applied to 4'-n-octyl-4-cyanobiphenyl and the anisotropy and the temperature dependence of its thermal diffusivity are measured.