Short-wavelength X-rays (WKcq-2-0.209,~,) have been used to collect higher-order reflections for studies of the electron-density distributions of silicon and diamond with high resolution. The sp 3 bonding electron-density distributions of these materials are visible in the total electron-density maps synthesized by the maximum-entropy method (MEM) and also in the difference MEM maps synthesized by Fourier summation of Fmem(h)-F°re(h), where Fmem(h) is the structure factor calculated from the MEM map and F°re(h) is the structure factor calculated from Si c°re and C c°re models, if very extensive data sets with higherorder reflections are used. These maps are more informative than the conventional difference Fourier map synthesized by Fourier summation of F°bS(h)-F°re(h) using the observed structure factor F°bs(h) instead of Fmem(h). The present maps can be compared with certain band-theory calculations.

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