We have studied Cd/n-Si (33 dots) Schottky barrier diodes (SBDs). Si surfaces have been prepared by the usual chemical etching, and the evaporation of metal has been carried out in a conventional vacuum system. The effective Schottky barrier heights (SBHs) and ideality factors obtained from the current–voltage (I–V) characteristics differ from diode to diode although the samples were identically prepared. The SBH for the Cd/n-Si diodes ranged from 0.605 eV to 0.701 eV, and ideality factor n from 1.213 to 1.913. The reason for that the experimental data differ from diode to diode has been analyzed by applying thermionic emission theory (TET) of inhomogeneous Schottky contacts together with standard TET and thus the effect of series resistance on the relationship between barrier heights and ideality factors of the inhomogeneous SBDs has clearly been shown. A laterally homogeneous SBH value of approximately 0.770 eV for Cd/n-Si SDs has been obtained by the barrier inhomogeneity model.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.