Diamane was prepared from the exposure of bi-layer graphene to H radicals produced by the hot-filament process. A sharp sp 3 -bonded carbon stretching mode was observed by UV Raman spectroscopy while no sp 2 -bonded carbon peak was simultaneously detected. This is the first time that Raman spectra of genuine diamane are reported, which, meanwhile, are the very first evidence for the successful synthesis of genuine diamane. First principle calculations support possible full hydrogenation and confirm the hydrogenated AB configuration to be the most stable one. We believe those results constitute a milestone in the path towards the synthesis of high-quality diamane and open the door to large-scale production. Genuine diamane consists of two crystalline sp 3 −bonded carbon layers for which half of the carbon atoms are hydrogenated while the other half bond the two layers to each other [1,2]. The material stability was first predicted by Chernozatonskii et al in 2009 [1]. The increasing interest in this new 2D wide bang-gap semiconducting material comes, in particular, from its potential use in electronics [3]. Recently, the synthesis of stable 2D nanometer-thick and crystalline sp 3 -bonded carbon, was unambiguously shown for the first time [2,4]. This breakthrough was achieved from
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