We studied the effective net charge density (Qeff) of strontium silicate (SrxSiOx+2, x = 1, 2, 3) films grown on silicon (Si) (100) substrates. The SrxSiOx+2 layers were deposited from a Sr2SiO4 polycrystalline target by pulsed laser deposition, and then annealed at 400–600 °C in an oxygen atmosphere with a tube furnace. The Qeff values of the SrxSiOx+2/Si (100) samples were obtained from the shift in the voltage of the flat band state in their capacitance–voltage curves. The SrxSiOx+2/Si (100) samples with a thickness of 15 nm annealed at 400 °C showed the maximum Qeff/q value of 1.03 × 1013 cm−2, where q is the elementary charge. With increasing annealing temperature, the SrxSiOx+2 layer penetrated into the Si (100) substrate. This penetration may degrade the interfacial properties and decrease the Qeff value of the layers. For all the samples, the charges concentrated near the SrxSiOx+2/Si (100) interface. Our results suggest that anion and cation migration plays an important role in charge generation at the SrxSiOx+2/Si (100) interface, consistent with the findings of a previously reported molecular dynamics calculation.
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