We developed a process for Multilayered waveguide holographic memory media. By UV embossing, 100 layer structure was fabricated, and output images could be observed without crosstalk. This process is suitable for mass production at low cost. This memory system can be applied for high density, removable memory.
A multilayered waveguide holographic memory media consists of a stack of single-mode slab waveguides. An UV embossing process has been developed for fabricating this structure. This process is suitable for mass production at low cost, but it is has a disadvantage of poor precision in the control of layer thickness and data position. The distribution of the core inclination and the error in data position alignment were checked, and the results showed that this process is sufficiently accurate for fabricating the above media. Also, the durability of the media fabricated by the UV embossing process was tested. The media was preserved under high-temperature and high-humidity conditions (80°C and 85%RH respectively). The results showed that this media has sufficient durability for practical use.
A new type of organic photoconductor composed of 9-ethylcarbazole-3-carbaldehyde diphenylhydrazone (DPH) dispersed in a polycarbonate polymer (PCR) film, when in the presence of thio-Michler’s ketone (TMK), was found to exhibit a sustained state of enhanced conductivity following visible irradiation. At room temperature, the enhanced current is observed to decay slowly over a period of a day and when heated it rapidly returns to its original state. A potential application of this ‘‘memory’’ effect to an artificial neuron model, using such memory-type organic photoconductors as optically controllable interconnections, is discussed. A liquid-crystal cell is used to demonstrate a nonlinear-saturated response dependent on a weighted input electric signal.
We measured the magnetic susceptibility , electrical resistivity , and specific heat of a sputtered amorphous (a-)CeRu 2 Al 10 alloy. value for a-CeRu 2 Al 10 alloy follows a Curie-Weiss paramagnetic behavior in the high-temperature region, and magnetic transition was not observed down to 2 K. The effective paramagnetic moment eff is 1.19 /Ce-atom. The resistivity shows a typical disordered alloy behavior, that is, small temperature dependence for the whole temperature range. We observed an enhancement of and / in the low-temperature region of < 10 K. The enhancement in is suppressed by applying a magnetic field. It is suggested that this behavior is caused by the Kondo effect.
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