The
one-dimensional (1D) form of van der Waals (vdW) layered compounds
attracts growing interest due to their unusual physical properties
and potential for nanoelectronic devices. However, the natural domain
structure of vdW layered compounds is generally in a 2D form (nanosheets).
Here, we report the high-quality 1D growth of vdW layered SnSe nanoribbons
(NRs) via vapor deposition. The morphology evolution of SnSe products
was systematically investigated. Angle-resolved polarized Raman spectroscopy
and transmission electron microscopy analyses showed that the SnSe
NRs are oriented along the [010] (zigzag, ZZ) direction. The intact
morphology and good crystallinity suggest that the growth of SnSe
NRs obeys a catalysis-free vapor–solid mechanism. Density functional
theory calculations unveiled that the minimal migration barrier (0.33
eV) along the ZZ direction and the ZZ-oriented in-plane quasi-1D nature
of SnSe are the main driving force of the 1D growth of vdW layered
SnSe.
Switchable polarization in ferroelectric catalysts shows promise to overcome Sabatier limitation imposed on traditional catalysts. However, a comprehensive understanding of the polarization effect on the electrocatalytic performance remains elusive. In...
Multilevel resistive switching in memristive devices is vital for applications in non-volatile memory and neuromorphic computing. In this study, we report on the multilevel resistive switching characteristics in SnSe/SrTiO3(STO) heterojunction-based memory devices with silver (Ag) and copper (Cu) top electrodes. The SnSe/STO-based memory devices present bipolar resistive switching (RS) with two orders of magnitude on/off ratio, which is reliable and stable. Moreover, multilevel state switching is achieved in the devices by sweeping voltage with current compliance to SET the device from high resistance state (HRS) to low resistance state (LRS) and RESET from LRS to HRS by voltage pulses without compliance current. With Ag and Cu top electrodes, respectively, eight and six levels of resistance switching were demonstrated in the SnSe/SrTiO3 heterostructures with a Pt bottom electrode. These results suggest that a SnSe/STO heterojunction-based memristor is promising for applications in neuromorphic computing as a synaptic device.
The
advent of halide perovskites in recent years has opened an
avenue for redeveloping perovskite materials as semiconductors. In
the quest for semiconducting perovskites, chalcogenides, which exhibit
higher stability than their halide siblings and often direct band
gaps for optoelectronics, have attracted more and more attention.
So far, functional chalcogenide perovskites have been exclusively
sulfides. Here, employing first-principles calculations and the criterion
of phase stability in addition to the commonly used thermodynamic
and dynamical criteria, we precisely predict the existence of LaScSe3 as a thermodynamically stable selenide perovskite, which
is validated by our experimental synthesis. Combining hybrid functional
and many-body quasi-particle (G0W0 and Bethe–Salpeter
equation) calculations, we predict that LaScSe3 is a direct-gap
semiconductor having the band gap in the green-to-blue region and
capable of p- and n-type bipolar doping, potentially for optoelectronic
applications.
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