We present a new high-speed drift-enhanced InGaAs/InP mushroom vertical PIN photodetector which is integrated on a GaAs/AlGaAs F-P filter cavity using an undercut mushroom mesa structure to significantly reduce both the detectorRCconstant and the parasitic capacitance. A 3dB bandwidth of 110 GHz and a quantum efficiency of 68% are simultaneously obtained at 1.55 μm wavelength.

We demonstrate a new multiple-junction photodetector incorporating concentric circular subwavelength gratings as a broadband reflector. A quantum efficiency of 81% and a 3dB bandwidth of 121 GHz are simultaneously obtained due to the suitable design of junction number and absorption layer thickness.