The electron beam assisted etch rates for SiO2 by using XeF2 and CF4 gases were measured as a function of primary electron energy. The deposition rate of Fe on SiO2 substrate with Fe(CO)5 as a source gas was also measured. It is seen that both the etch rate and the deposition rate are higher at lower primary electron energies in the region of 1 keV to 15 keV.
We report on the electron spin resonance (ESR) study of the photo-oxidative stress-mediated protein conformation changes in the spin-labelled protein staphylococcal nuclease (SNase). The photo-oxidative stress was brought on by photosensitization of singlet oxygen ( 1 g ) in the presence of a novel photosensitizer, water-soluble fullerol C 60 (OH) 19 (ONa) 17 , and resulted in partial protein denaturation. This process was monitored via ESR measurements performed for a spin-labelled SNase Thr-62-Cys mutant, with MTSSL spin label (SL) attached to the cysteine 62 residue (SNase T62C-SL). Prior to ESR measurements of the oxidative stress-induced alterations in protein conformations, the efficiency of C 60 (OH) 19 (ONa) 17 for 1 g -generation was confirmed by three different techniques: (i) selective reactive scavenging of 0953-8984/07/285201+13$30.00
The results of measurements of Si-L2,3 X-ray emission spectra of Si3N4 films deposited on GaAs substrates after irradiation by Kr2 and Ar2 excimer lasers are presented. By using the excitation of X-ray emission spectra with focused electron beam, local precipitation of crystalline silicon is found.
Electron beam assisted high aspect ratio, submicrometre etching of the passivation SiO2 on large-scale integrated circuits (LSIS) with XeF2 as a source gas is described. The end point of the etching process can be determined from either the current absorbed by the specimen or the secondary electron current monitored during the electron beam irradiation. The etched hole diameters at the etching end point are found to be nearly equal to the tail diameters of the electron beam profiles, as reconstructed from the electron beam intensity distributions across a knife edge mounted on a Faraday cup. A groove with a high aspect ratio of ten is formed in 2 mu m thick SiO2 by using the electron beam probe with an energy of 15 keV, a current of 50 pA and a tail diameter of 0.15 mu m.
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