We
report the preparation of discrete nanometer-scale zinc-based
clusters and use them to form sub-15 nm structures by means of extreme
ultraviolet lithography. By taking advantage of a metal-containing
building unit derived by a metal–organic frameworkMOF-2,
we found the 3-methyl-phenyl-modified Zn-mTA cluster
that formed is well-defined with controlled size and structure and
demonstrates extremely high solubility. Progress in recent years in
metal–organic frameworks has created a rich variety of metal-containing
structures that are useful for numerous applications. Substitution
of the bridging ligands with monovalent ligands produces a discrete
metal–organic cluster that strongly interacts with soft X-rays
at a wavelength of 13 nm. Here we describe the design, preparation,
computational modeling, and physical characterization of these new
materials. Such metal-containing structures may form the basis of
photoresists that enable the next generation of microelectronic devices.
The first catalytic intermolecular [2 + 2] cycloaddition of terminal alkynes with electron-deficient alkenes is reported. The reaction proceeds with an 8-quinolinolato rhodium/phosphine catalyst system to give cyclobutenes from various substrates having polar functional groups in high yields with complete regioselectivity.
An efficient method for synthesis of E-enamines by the anti-Markovnikov addition of secondary amines to terminal alkynes is described. The reaction of a variety of aryl- and heteroarylacetylenes proceeded at room temperature using a combination of a 8-quinolinolato rhodium complex and P(p-MeOC(6)H(4))(3) as a catalyst. The products were obtained as enamines by simple bulb-to-bulb distillation.
Most advanced microelectronic devices are made by using 193 nm immersion lithography systems, but it is difficult to follow the rapid development of semiconductors due to their approaching physical limits. Extreme ultraviolet (EUV) lithography which uses a shorter wavelength (i.e., 13.5 nm) light source can offer a way to print features under a 20 nm HP. EUV lithography requires photoresists that utilize EUV photons because photons generated by EUV exposure are fewer than photons generated by 193 nm light exposure. In this paper, our recent progress in metal oxide photoresist research will be discussed.
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