A covering of an alumina insulating layer was deposited on the top of a C60 thin-film field-effect transistor (FET) by rf magnetron sputtering with Ar gas, in order to passivate the FET action from the degradation due to oxygen adsorption. The deposited alumina was amorphous and slightly oxygen deficient from the stoichiometry. The stability of FET action in air was considerably improved and no degradation has been detected even for more than one month.
A nanoscale C60 field-effect transistor has been fabricated with carbon nanotubes (C60CNT-FET). A wire of multiwalled carbon nanotube has been anchored by metal pads on a Si wafer, and cut by bombardment with focused Ga2+ ion beam. The cut ends of the wire have been integrated as source-drain electrodes into the C60CNT-FET, with a vacuum evaporated C60 thin film. The C60CNT-FET has exhibited an excellent performance of a low-voltage drive operation, without any short-channel effect even at as small as 100 nm of channel length.
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