Lead has recently been expelled from many commercial applications and materials (for example, from solder, glass and pottery glaze) owing to concerns regarding its toxicity. Lead zirconium titanate (PZT) ceramics are high-performance piezoelectric materials, which are widely used in sensors, actuators and other electronic devices; they contain more than 60 weight per cent lead. Although there has been a concerted effort to develop lead-free piezoelectric ceramics, no effective alternative to PZT has yet been found. Here we report a lead-free piezoelectric ceramic with an electric-field-induced strain comparable to typical actuator-grade PZT. We achieved this through the combination of the discovery of a morphotropic phase boundary in an alkaline niobate-based perovskite solid solution, and the development of a processing route leading to highly <001> textured polycrystals. The ceramic exhibits a piezoelectric constant d33 (the induced charge per unit force applied in the same direction) of above 300 picocoulombs per newton (pC N(-1)), and texturing the material leads to a peak d33 of 416 pC N(-1). The textured material also exhibits temperature-independent field-induced strain characteristics.
O 3 polycrystals exhibit piezoelectric properties comparable to those of lead zirconium titanate ceramics which are high-performance piezoelectric materials. The properties of the Pb-free piezoelectric ceramic are due to the existence of a morphotropic phase boundary in the alkaline niobate-based perovskite solid solution. It is expected that the new material is a leading candidate for environmentally friendly piezoelectric devices. -(SAITO, Y.; TAKAO, H.; TANI, T.; NONOYAMA, T.; TAKATORI, K.; HOMMA, T.; NAGAYA, T.; NAKAMURA, M.; Nature (London, UK) 432 (2004) 7013, 84-87; Toyota Cent. Res. Dev. Lab., Nagakute, Aichi 480-11, Japan; Eng.) -W. Pewestorf 03-016
Silicon carbide (SiC) has a range of useful physical, mechanical and electronic properties that make it a promising material for next-generation electronic devices. Careful consideration of the thermal conditions in which SiC [0001] is grown has resulted in improvements in crystal diameter and quality: the quantity of macroscopic defects such as hollow core dislocations (micropipes), inclusions, small-angle boundaries and long-range lattice warp has been reduced. But some macroscopic defects (about 1-10 cm(-2)) and a large density of elementary dislocations (approximately 10(4) cm(-2)), such as edge, basal plane and screw dislocations, remain within the crystal, and have so far prevented the realization of high-efficiency, reliable electronic devices in SiC (refs 12-16). Here we report a method, inspired by the dislocation structure of SiC grown perpendicular to the c-axis (a-face growth), to reduce the number of dislocations in SiC single crystals by two to three orders of magnitude, rendering them virtually dislocation-free. These substrates will promote the development of high-power SiC devices and reduce energy losses of the resulting electrical systems.
Various oxide powders were prepared by the emulsion combustion method (ECM) using metal precursors, kerosene, and a surfactant. The product particles were characterized by transmission electron microscopy (TEM), nitrogen adsorption, and X‐ray diffraction. Hollow γ‐Al2O3 particles were produced from aluminum nitrate or chloride precursors dispersed in air, whereas dispersion of the precursor emulsion in oxygen resulted in solid α‐Al2O3 particles. Hollow spheres were obtained also for TiO2, ZrO2, and Y2O3 by ECM of TiCl4, zirconium oxynitrate, and yttrium nitrate in aqueous solution. A simple method was developed to predict the thickness and diameter of hollow particles using the nitrogen adsorption data and initial droplet concentration of the ECM spray. The TEM diameter and shell thickness of hollow particles were consistent with those predicted. In contrast, solid particles were formed by ECM for ZnO, Fe2O3, CeO2, and MgO from aqueous solutions of their corresponding nitrates.
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