The effects of gamma-ray exposures on the electrical characteristics of Silicon Nitride (Si 3 N 4 ) metal-insulatorsemiconductor (MIS) structures have been investigated at room temperature. The MIS structures were irradiated with the GAMMACELL 220 Co-60 radioactive source. The distributions of interface states and series resistance were determined from the C-V and G/ω-V characteristics by taking into account the irradiation-dependent the barrier height. Both the values of series resistance, interface states and barrier heights enhanced with increasing dose. Experimental results demonstrate that gamma-ray irradiations have the significant effects on electrical characteristics of Si 3 N 4 MIS structures.
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